BI-SUBSTITUTED GARNET-FILMS CRYSTALLIZED DURING RF SPUTTERING FOR M-O MEMORY

被引：23

作者：

GOMI, M

OKAZAKI, T

ABE, M

机构：

[1] Tokyo Inst of Technology, Tokyo, Jpn, Tokyo Inst of Technology, Tokyo, Jpn

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1987年 / 23卷 / 05期

关键词：

D O I：

10.1109/TMAG.1987.1065444

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

4

引用

收藏

页码：2967 / 2969

页数：3

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[1] RF-SPUTTERED FILMS OF BISUBSTITUTED GARNET FOR MAGNETOOPTICAL MEMORY
GOMI, M
UTSUGI, K
ABE, M
[J]. IEEE TRANSACTIONS ON MAGNETICS, 1986, 22 (05) : 1233 - 1235
[2] RF SPUTTERING OF HIGHLY BI-SUBSTITUTED GARNET-FILMS ON GLASS SUBSTRATES FOR MAGNETO-OPTIC MEMORY
GOMI, M
TANIDA, T
ABE, M
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 3888 - 3890
[3] BISMUTH IRON-GARNET FILMS PREPARED BY RF MAGNETRON SPUTTERING
KRUMME, JP
DOORMANN, V
WILLICH, P
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 3885 - 3887
[4] MAGNETIC AND STRUCTURAL PROPERTIES OF EPITAXIAL AND POLYCRYSTALLINE GDIG FILMS PREPARED BY RF SPUTTERING
SAWATZKY, E
KAY, E
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) : 367 - +