OPTIMIZATION AND CHARACTERIZATION OF INAS/(ALGA)SB HETEROJUNCTION FIELD-EFFECT TRANSISTORS

被引：19

作者：

YOH, K

MORIUCHI, T

INOUE, M

机构：

[1] Department of Electrical Engineering, Osaka Institute of Technology

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 12期

关键词：

INAS; HETEROJUNCTION FET; (ALGA)SB BARRIER; MBE GROWTH; GASB BUFFER; IMPACT IONIZATION;

D O I：

10.1143/JJAP.29.L2445

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the structural optimization and characterization of (AlGa)Sb/InAs quantum well heterojunction field-effect transistor based on molecular beam epitaxy (MBE). A 1.7-mu-m-gate-length InAs-channel FET with optimized heterostructure showed a transconductance of more than 460 mS/mm (V(ds) = 0.5 v) at room temperature. Higher transconductance and drain current increase in the higher lateral electric field region (V(ds) > 0.8 v) corresponds to the increased carrier concentration measured by the pulsed high-field Hall-effect method on ungated samples.

引用

页码：L2445 / L2448

页数：4

共 6 条

[1] ANALYSIS OF KINK CHARACTERISTICS IN SILICON-ON-INSULATOR MOSFETS USING 2-CARRIER MODELING [J].