HYDROGEN INCORPORATION BEHAVIOR AND RADIATION-DAMAGE IN PROTON BOMBARDED INP SINGLE-CRYSTALS

被引:9
作者
ASCHERON, C
RIEDE, V
SOBOTTA, H
NEUMANN, H
机构
来源
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1990年 / 115卷 / 1-3期
关键词
INP; HYDROGEN IMPLANTATION; RADIATION DAMAGE; INFRARED ABSORPTION; ANNEALING; HYDROGEN BONDING;
D O I
10.1080/10420159008220563
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
In proton bombarded InP single crystals the incorporation behaviour of different hydrogen isotopes is studied in relation to implantation induced radiation defects. Investigations of the fluence dependence (D= 1016-1018cm-2), of the depth profile and of the annealing behaviour (Tan= 300–1000 K) of hydrogen incorporation and of damage density indicate that only a small fraction of the implanted hydrogen is chemically bonded to host lattice atoms. These bonded hydrogen atoms saturate dangling bonds at defect sites. © 1990, Taylor & Francis Group, LLC. All rights reserved.
引用
收藏
页码:145 / 155
页数:11
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