INTRINSIC FRACTURE ENERGY OF POLYCRYSTALLINE SILICON-NITRIDE

被引：38

作者：

PEZZOTTI, G ^{[1
]}

TANAKA, I ^{[1
]}

NISHIDA, T ^{[1
]}

机构：

[1] KYOTO INST TECHNOL,FAC POLYTECH SCI,DEPT MAT ENGN,SAKYO KU,KYOTO 606,JAPAN

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1993年 / 67卷 / 02期

基金：

日本学术振兴会;

关键词：

D O I：

10.1080/09500839308243858

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The fracture surface energy of a dense pure polycrystalline sample of silicon nitride (Si3N4) has been measured at room temperature by the work-of-fracture method on chevron-notched bend bars. Dense specimens were fabricated by hot isostatically pressing highly pure Si3N4 starting powder at 1950-degrees-C under 180 MPa via glass encapsulation. Annealing experiments at 1750-degrees-C in a nitrogen atmosphere were also conducted after sintering in order to release internal residual stresses possibly arising from cooling down under high pressure. A value of 10.7+/-0.8 J m-2 was measured in both as-sintered and annealed specimens. According to fractographic observation and calculation of the theoretical compliance of the notched specimen, the present value is regarded as the intrinsic fracture energy of Si3N4 and is to be compared with the markedly higher values commonly measured in alloyed materials.

引用

页码：95 / 100

页数：6

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