TEMPERATURE DEPENDENCE OF MOBILITY OF WARM CARRIERS IN GERMANIUM AND SILICON

被引：19

作者：

HAMAGUCHI, C

INUISHI, Y

机构：

来源：

关键词：

D O I：

10.1143/JPSJ.18.1755

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1755 / &

共 21 条

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[5] NORMAL VIBRATIONS OF GERMANIUM BY NEUTRON SPECTROMETRY
BROCKHOUSE, BN
IYENGAR, PK
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[7] LATTICE MOBILITY OF HOT CARRIERS
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[8] THE ABSORPTION OF 39 KMC-S (39 GC-S) RADIATION IN GERMANIUM
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[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (04): : 488 - 490
[9] GIBSON AF, 1956, J ELECTRON, V2, P259
[10] GUNN JB, 1957, PROGRESS SEMICONDUCT, V2, P211