LOW-TEMPERATURE STUDIES ON NORMAL PEROVSKITE OXIDES - ROLE OF CORRELATION AND DISORDER

被引:23
作者
RAYCHAUDHURI, AK
RAJEEV, KP
SRIKANTH, H
MAHENDIRAN, R
机构
[1] Department of Physics, Indian Institute of Science, Bangalore
来源
PHYSICA B | 1994年 / 197卷 / 1-4期
关键词
D O I
10.1016/0921-4526(94)90206-2
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this report we discuss the main results of low temperature transport and tunneling measurements in correlated metallic oxides belonging to the ABO3 class. Electron-electron interaction in these metallic oxides gives rise to a T1/2 term in the conductivity (sigma) below 10 K. The tunneling conductance shows a characteristic cusp. In these materials the metallic state [sigma(T = 0) not-equal 0] is retained for sigma(T = 0) < sigma(Mott) and dsigma/dT > 0. Near the critical region of the metal-insulator transition we find that the conductivity sigma(T) varies as sigma0 + alphaT(m). However, away from the transition, m = 1/2 and as sigma0 < sigma(Mott), m --> 1/3 or 1/2.5 depending on the strength of magnetic scattering. But very close to the transition (sigma0 much less than sigma(Mott)), m --> 1.
引用
收藏
页码:124 / 132
页数:9
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