A DECONVOLUTION PROCEDURE FOR PHOTOTHERMAL AND PHOTOCONDUCTIVE SPECTRA OF AMORPHOUS-SILICON FILMS

被引：12

作者：

AMATO, G

GIORGIS, F

SPAGNOLO, R

机构：

[1] Istituto Elettrotecnico Nazionale Galileo Ferraris, 91-10135 Turin, Strada delle Cacce

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 07期

关键词：

D O I：

10.1063/1.350927

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simple deconvolution procedure has been applied to photothermal and photoconductive spectra of a-Si:H films. The method requires no assumption about the midgap density of states, thus obtaining results in an unambiguous way. The analysis of the distortion occurring in photothermal spectra due to surface states is shown to be an effective way to separate between surface and bulk absorption, thus enabling a direct comparison between photothermal and photoconductive spectroscopies.

引用

页码：3479 / 3485

页数：7

共 28 条

[1]

AMATO G, 1990, MATER RES SOC SYMP P, V192, P207, DOI 10.1557/PROC-192-207

[2] PHOTOTHERMAL AND PHOTOCONDUCTIVE MEASUREMENTS OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED AMORPHOUS-SILICON [J].