SINGLE-LAYER RESIST FOR DEEP, MICROMETER AND NANOMETER STRUCTURE TRANSFER

被引：6

作者：

HUDEK, P

BORKOWICZ, Z

KOSTIC, I

RANGELOW, IW

KASSING, R

机构：

[1] Inst. of Technical Physics, University of Kassel, 3500 Kassel

[2] Inst. of Computer Systems, Slovak Academy of Sciences, 842 37 Bratislava

[3] Inst. of Electron Technology, Technical Univ. of Wroclaw, 67 640 Wroclaw

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 21卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(93)90074-F

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of the AZ PF 514 positive resist in single-layer electron-beam lithography (EBL) and reactive ion etching (RIE) has been investigated. The fabrication possibilities of silicon micromechanical parts and structures with nanometer details are presented. The basic lithographic and pattern transfer properties are discussed.

引用

页码：283 / 288

页数：6

共 9 条

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