1-F NOISE IN GERMANIUM DEVICES

被引：22

作者：

WATKINS, TB

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1959年 / 73卷 / 469期

关键词：

D O I：

10.1088/0370-1328/73/1/311

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：59 / 68

页数：10

共 13 条

[1]

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[2]

BARDEEN J, 1953, BELL SYST TECH J, V32, P1

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BESS, L .

PHYSICAL REVIEW, 1956, 103 (01) :72-82

[4]

FONGER W, 1956, TRANSISTORS, V1, P239

[5] REVIEW OF GERMANIUM SURFACE PHENOMENA [J].

KINGSTON, RH .

[6]

MCWHORTER AL, 1955, THESIS MASSACHUSETTS

[7]

MCWHORTER AL, 1956, SEMICONDUCTOR SURFAC, P207

[8] GENERATION OF 1-F NOISE BY LEVELS IN A LINEAR OR PLANAR ARRAY [J].

MORRISON, SR .

PHYSICAL REVIEW, 1955, 99 (06) :1904-1905

[9] RECOMBINATION OF ELECTRONS AND HOLES AT DISLOCATIONS [J].

MORRISON, SR .

PHYSICAL REVIEW, 1956, 104 (03) :619-623

[10]

PETRITZ RL, 1956, SEMICONDUCTOR SURFAC, P226