MICROWAVE INXGA1-XASYP1-Y-INP FET

被引:7
作者
MORKOC, H
ANDREWS, JT
HOUNG, YM
SANKARAN, R
BANDY, SG
ANTYPAS, GA
机构
关键词
D O I
10.1049/el:19780300
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:448 / 449
页数:2
相关论文
共 5 条
[1]   ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M [J].
HSIEH, JJ ;
ROSSI, JA ;
DONNELLY, JP .
APPLIED PHYSICS LETTERS, 1976, 28 (12) :709-711
[2]  
HURWITZ CE, 1978, TOPICAL M INTEGRATED
[3]   VELOCITY-FIELD CHARACTERISTICS OF GA1-XINXP1-YASY QUATERNARY ALLOYS [J].
LITTLEJOHN, MA ;
HAUSER, JR ;
GLISSON, TH .
APPLIED PHYSICS LETTERS, 1977, 30 (05) :242-244
[4]   EFFICIENT LATTICE-MATCHED DOUBLE-HETEROSTRUCTURE LEDS AT 1.1 MU-M FROM GA-XIN-1-XAS-YP-1-Y [J].
PEARSALL, TP ;
MILLER, BI ;
CAPIK, RJ ;
BACHMANN, KJ .
APPLIED PHYSICS LETTERS, 1976, 28 (09) :499-501
[5]  
WRIGHT PD, 1978, 1 INF TECHN REP