DOMAIN SWITCHING MEASUREMENTS IN AN ANTIFERROMAGNET

被引：9

作者：

BROWN, CA

ODELL, TH

机构：

[1] Department of Electrical Engineering, Imperial College, London

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1969年 / MAG5卷 / 04期

关键词：

D O I：

10.1109/TMAG.1969.1066657

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The magnetoelectric effect has been used to observe the domain state of antiferromagnetic chromium oxide single crystals during domain reversal. Switching times have been accurately measured as a function of applied fields for two samples, one highly strained, one relatively strain free. The temperature dependence of the domain switching threshold fields has been measured for temperatures close to the Néel point, and a simple model is presented to explain the results obtained. © 1969 IEEE. All rights reserved.

引用

页码：964 / &

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