LIGHT-INDUCED EFFECTS ON THE GROWTH AND DOPING OF WIDE-BANDGAP-II-VI COMPOUNDS

被引:11
作者
MARFAING, Y
机构
[1] Lab. de Phys. des Solides de Bellevue, CNRS, Meudon
关键词
D O I
10.1088/0268-1242/6/9A/010
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effects of bandgap light irradiation on the growth and the doping from the vapour phase of wide-gap II-VI compounds are reviewed. These effects rely on the interaction of the photogenerated carriers with the species present at the surface: molecular reagents (for MOVCD), adatoms, vacancies. The main observations are: enhanced decomposition of adsorbed molecules, enhanced desorption of chemisorbed atoms, higher surface mobility leading to a better crystalline quality, reduction of impurity compensation. The mechanisms of interaction are illustrated by means of simple microscopic models.
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页码:A60 / A64
页数:5
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