LOW-ENERGY ION-BOMBARDMENT EFFECTS IN SIO2

被引：35

作者：

MCCAUGHAN, DV ^{[1
]}

MURPHY, VT ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1972年 / NS19卷 / 06期

关键词：

D O I：

10.1109/TNS.1972.4326841

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：249 / 255

页数：7

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