AUGER-RECOMBINATION IN SI

被引：134

作者：

BECK, JD ^{[1
]}

CONRADT, R ^{[1
]}

机构：

[1] UNIV STUTTGART,PHYS INST,STUTTGART 1,WEST GERMANY

来源：

关键词：

D O I：

10.1016/0038-1098(73)90075-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：93 / 95

页数：3

共 8 条

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[2] MINORITY CARRIER LIFETIME IN HIGHLY DOPED GE
CONRADT, R
AENGENHEISTER, J
[J]. SOLID STATE COMMUNICATIONS, 1972, 10 (03) : 321 - +
[3] CONRADT R, 1972, FESTKORPERPROBLEME, V12, P449
[4] BAND-TO-BAND AUGER RECOMBINATION IN INDIRECT GAP SEMICONDUCTORS
HULDT, L
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 8 (01): : 173 - &
[5] SPECTRUM AND DECAY OF RECOMBINATION RADIATION FROM STRONGLY EXCITED SILICON
NILSSON, NG
SVANTESSON, KG
[J]. SOLID STATE COMMUNICATIONS, 1972, 11 (01) : 155 - +
[6] RECOMBINATION IN STRONGLY EXCITED SILICON
SVANTESSON, KG
NILSSON, NG
HULDT, L
[J]. SOLID STATE COMMUNICATIONS, 1971, 9 (03) : 213 - +
[7] VAVILOV VS, 1968, SOV PHYS SEMICOND+, V2, P616
[8] WOERDMAN JP, 1971, THESIS AMSTERDAM