DELAYED-FAILURE RESISTANCE OF HIGH-PURITY SI3N4 AT 1400-DEGREES-C

被引：22

作者：

TANAKA, I

PEZZOTTI, G

机构：

[1] Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1992年 / 75卷 / 04期

关键词：

D O I：

10.1111/j.1151-2916.1992.tb04180.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Delayed failure and creep behavior of high-purity Si3N4 sintered without additives with a mean grain size of 1-mu-m has been measured at 1400-degrees-C. Lifetime under 300 MPa was > 240 h, which showed good agreement with the value predicted in our previous report. Creep strain rate ranged from 1 x 10(-5) to 3 x 10(-5) h-1 between 200 and 360 MPa. These values demonstrate the excellent potential of high-purity Si3N4 materials for structural application up to 1400-degrees-C.

引用

页码：1023 / 1025

页数：3

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