SEMICONDUCTOR PROPERTIES BASED UPON UNIVERSAL TIGHT-BINDING PARAMETERS

被引：45

作者：

REN, SY

HARRISON, WA

机构：

来源：

PHYSICAL REVIEW B | 1981年 / 23卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.23.762

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：762 / 770

页数：9

共 23 条

[1] ACOUSTO-OPTIC PROPERTIES OF CRYSTALLINE GERMANIUM
ABRAMS, RL
PINNOW, DA
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 2765 - +
[2] [Anonymous], ELECTRONIC STRUCTURE
[3] ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES OF HEXAGONAL CDSE CDS AND ZNS
BERGSTRESSER, TK
COHEN, ML
[J]. PHYSICAL REVIEW, 1967, 164 (03): : 1069 - +
[4] PHOTOELASTICITY OF CUPROUS HALIDES
BIEGELSEN, DK
ZESCH, JC
SCHWAB, C
[J]. PHYSICAL REVIEW B, 1976, 14 (08): : 3578 - 3582
[5] FREQUENCY-DEPENDENCE OF PHOTOELASTIC COEFFICIENTS OF SILICON
BIEGELSEN, DK
[J]. PHYSICAL REVIEW B, 1975, 12 (06): : 2427 - 2431
[6] TIGHT-BINDING CALCULATIONS OF VALENCE BANDS OF DIAMOND AND ZINCBLENDE CRYSTALS
CHADI, DJ
COHEN, ML
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 68 (01): : 405 - 419
[7] CALCULATION OF LATTICE DYNAMICAL PROPERTIES FROM ELECTRONIC ENERGIES - APPLICATION TO C, SI AND GE
CHADI, DJ
MARTIN, RM
[J]. SOLID STATE COMMUNICATIONS, 1976, 19 (07) : 643 - 646
[8] ORTHOGONALIZED LINEAR COMBINATIONS OF ATOMIC ORBITALS - APPLICATION TO CALCULATION OF ENERGY-BANDS OF SIIII
CHING, WY
LIN, CC
[J]. PHYSICAL REVIEW B, 1975, 12 (12): : 5536 - 5544
[9] ELECTRONIC PROPERTIES OF TETRAHEDRAL INTERMETALLIC COMPOUNDS .1. CHARGE DISTRIBUTION
COULSON, CA
REDEI, LB
STOCKER, D
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1962, 270 (1342): : 357 - &
[10] ELEMENTARY PREDICTION OF LINEAR COMBINATION OF ATOMIC ORBITALS MATRIX-ELEMENTS
FROYEN, S
HARRISON, WA
[J]. PHYSICAL REVIEW B, 1979, 20 (06): : 2420 - 2422

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