TUNNELING CURRENTS IN IN0.53GA0.47AS HOMOJUNCTION DIODES AND DESIGN OF INGAAS-INP HETERO-STRUCTURE AVALANCHE PHOTO-DIODES

被引：29

作者：

ITO, M

KANEDA, T

NAKAJIMA, K

TOYAMA, Y

ANDO, H

机构：

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 05期

关键词：

D O I：

10.1016/0038-1101(81)90039-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：421 / 424

页数：4

共 19 条

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