THERMAL NOISE LIMITATIONS TO 2X20-MU-M2 MAGNETORESISTIVE MEMORY-ELEMENT THRESHOLDS

被引:7
作者
WAITE, RI
POHM, AV
COMSTOCK, CS
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10.1063/1.340872
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O59 [应用物理学];
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页码:3151 / 3152
页数:2
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[1]   0.075-MU-M, 1.25-MU-M AND 2.0-MU-M WIDE M-R TRANSDUCERS [J].
POHM, AV ;
COMSTOCK, CS .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1986, 54-7 :1667-1669
[2]   THRESHOLD PROPERTIES OF 1-MU-M, 2-MU-M AND 4-MU-M MULTILAYER MAGNETO-RESISTIVE MEMORY CELLS [J].
POHM, AV ;
DAUGHTON, JM ;
COMSTOCK, CS ;
YOO, HY ;
HUR, J .
IEEE TRANSACTIONS ON MAGNETICS, 1987, 23 (05) :2575-2577