COMPOSITIONAL MODULATION AND LONG-RANGE ORDERING IN GAP INP SHORT-PERIOD SUPERLATTICES GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY

被引：98

作者：

HSIEH, KC ^{[1
]}

BAILLARGEON, JN ^{[1
]}

CHENG, KY ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 21期

关键词：

D O I：

10.1063/1.103903

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Long-range ordering in a (GaP)2/(InP)2 short-period superlattice and a Ga0.525In0.475P buffer layer grown on a (001)GaAs substrate by gas source molecular beam epitaxy were studied. Transmission electron microscopy and low-temperature cathodoluminesence techniques were used to examine the microstructure of the short-period superlattice and to determine its band-gap energy. The superlattice layer was found to have a [001] long-range ordered structure with a band gap narrowing of about 130 meV, while the Ga0.525In0.475P layer had a 37 meV band-gap narrowing induced by spontaneous long-range ordering in the [111] direction. The ordered superlattice layer was found to have a growth-induced lateral periodic modulation of the composition along the [1̄10] direction. Within the modulating bands, which had a 200 Å periodicity, the In composition was found to vary from 42 to 56% while the Ga correspondingly varied between 58 and 44%.

引用

页码：2244 / 2246

页数：3

共 14 条

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