HIGH-TEMPERATURE DEFECT STRUCTURE OF LANTHANUM CUPRATE

被引：19

作者：

SU, MY

COOPER, EA

ELSBERND, CE

MASON, TO

机构：

[1] NORTHWESTERN UNIV,INST TECHNOL,DEPT MAT SCI & ENGN,EVANSTON,IL 60208

[2] NORTHWESTERN UNIV,INST TECHNOL,ENGN & MAT RES CTR,EVANSTON,IL 60208

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1990年 / 73卷 / 11期

关键词：

cuprates; defects; lanthanum; models; superconductors;

D O I：

10.1111/j.1151-2916.1990.tb06474.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

High‐temperature (650° to 8507deg;C) electrical conductivity and Seebeck coefficient measurements as functions of oxygen partial pressure and temperature in polycrystalline lanthanum cuprate support a defect model consisting of oxygen interstitials charge compensated by electron holes. The La:Cu ratio was therefore estimated to be 2.000 ± 0.001. By comparison with existing oxygen nonstoichiometry data, the high‐temperature electron hole mobility and density‐of‐states were estimated. Copyright © 1990, Wiley Blackwell. All rights reserved

引用

页码：3453 / 3456

页数：4

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