A THERMALLY ACTIVATED SOLID-STATE REACTION PROCESS FOR FABRICATING OHMIC CONTACTS TO SEMICONDUCTING DIAMOND

被引：103

作者：

MOAZED, KL ^{[1
]}

ZEIDLER, JR ^{[1
]}

TAYLOR, MJ ^{[1
]}

机构：

[1] USN, CTR OCEAN SYST, SAN DIEGO, CA 92152 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 05期

关键词：

D O I：

10.1063/1.346529

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Techniques have been developed to produce ohmic contacts to naturally occurring boron doped semiconducting diamond. Thin films of Mo, Mo/Au, and Mo/Ni/Au deposited on diamond produced adherent ohmic contacts after annealing at 950 °C. A thermally activated solid state reaction which produces a refractory carbide precipitate at the original diamond/metal interface is the principal factor in affecting the properties of the contacts. The interface reaction has been characterized using Auger electron spectroscopy, scanning electron microscopy, x-ray diffraction, metallography, and I-V measurements.

引用

页码：2246 / 2254

页数：9

共 44 条

[21] HARD CONDUCTING IMPLANTED DIAMOND LAYERS [J].