MN-IMPLANTED ZNS THIN-FILM ELECTROLUMINESCENT DEVICE

被引：17

作者：

TAKAGI, T ^{[1
]}

YAMADA, I ^{[1
]}

SASAKI, A ^{[1
]}

ISHIBASHI, T ^{[1
]}

机构：

[1] KYOTO UNIV, DEPT ELECTR, KYOTO, JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1973年 / ED20卷 / 11期

关键词：

D O I：

10.1109/T-ED.1973.17800

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1110 / 1114

页数：5

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[1] DC ELECTROLUMINESCENCE IN ZNS(MN) THIN FILMS WITH CU-RICH LAYER
INARI, T
TAKEDA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1964, 3 (12) : 802 - &
[2] MN-IMPLANTED ZNS THIN-FILM ELECTROLUMINESCENT CELL
TAKAGI, T
YAMADA, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (10) : 1587 - &
[3] ELECTRON-BOMBARDMENT TYPE SIMPLIFIED SOURCE FOR HIGH-TEMPERATURE OPERATION AND PRODUCTION OF MULTIPLY-CHARGED IONS UTILIZING BEAM-PLASMA INTERACTIONS
TAKAGI, T
YAMADA, I
ISHIKAWA, J
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (02) : 142 - &
[4] ELECTROLUMINESCENCE MAINTENANCE
THORNTON, WA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (11) : 895 - 907
[5] DIRECT CURRENT ELECTROLUMINESCENCE IN ZNS
VECHT, A
WERRING, NJ
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1970, 3 (02) : 105 - &