EFFECT OF SOURCE-SUPPLY INTERRUPTIONS ON THE INTERFACE ABRUPTNESS IN GAS-SOURCE MOLECULAR-BEAM EPITAXY-GROWN INGAAS/INP HETEROSTRUCTURES

The effect of source-supply interruptions on the InGaAs-InP heterointerface abruptness in gas-source molecular-beam epitaxy grown lattice-matched InGaAs/InP has been investigated. It is confirmed by observing high-resolution transmission electron microscope (HRTEM) images and photoluminescence (PL) peak energy shifts that the thickness of the InGaAs well becomes narrower as the source-supply interruption (SSI) becomes longer. When the SSI is not optimized, an interface layer forms, consisting of one to several strained monolayers as confirmed by PL and HRTEM. When the SSI is optimized, Auger electron microscopy, FL, and HRTEM reveal abrupt heterointerface formation.