ENHANCED FIELD EVAPORATION BY GAS IMPACT AND FIELD-ION MICROSCOPY OF BETA SILICON CARBIDE AND LANTHANUM HEXABORIDE

被引：9

作者：

SMITH, DA

机构：

来源：

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS | 1969年 / 2卷 / 01期

关键词：

D O I：

10.1088/0022-3735/2/1/432

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The irregular image development of silicon carbide in the field-ion microscope is suggested to be consistent with impact damage from accommodating helium image gas atoms. Best images of both β silicon carbide and lanthanum hexaboride were obtained using hydrogen image gas.

引用

页码：106 / &

共 8 条

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