GA-AS-SI - PHASE STUDIES AND ELECTRICAL PROPERTIES OF SOLUTION-GROWN SI-DOPED GAAS

被引：19

作者：

PANISH, MB

SUMSKI, S

机构：

来源：

关键词：

D O I：

10.1063/1.1659398

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3195 / &

共 13 条

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[6] GA-AS-SI TERNARY PHASE SYSTEM
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (11) : 1226 - &
[7] PANISH MB, TO BE PUBLISHED
[8] ROSZTOCZY FE, 1968, 134 M EL SOC MONTR
[9] RUPPRECHT H, 1966, APPL PHYS LETT, V9, P6
[10] LOCAL-MODE ABSORPTION AND DEFECTS IN COMPENSATED SILICON-DOPED GALLIUM ARSENIDE
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[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (11) : 4999 - &