MECHANISM OF CARBON AND OXYGEN INCORPORATION IN SILICON SINGLE-CRYSTALS GROWN BY THE CZOCHRALSKI (CZ) TECHNIQUE

被引：12

作者：

SCARLETE, M ^{[1
]}

机构：

[1] RES & PROD SEMICOND MAT,BUCHAREST,ROMANIA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1992年 / 139卷 / 04期

关键词：

D O I：

10.1149/1.2069368

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This paper presents a new model related to the incorporation of oxygen and carbon in silicon single crystals grown by the Czochralski (Cz) method. The segregation processes of oxygen and carbon involve several chemical species and are not independent. The connection is due to the presence of the CO molecule not only in the gas phase but also in the molten silicon and in the solidifying crystal. This model proposes the utlization of a global segregation coefficient in order to explain the scatter in the values of the current effective segregation coefficient of oxygen reported in literature.

引用

页码：1207 / 1212

页数：6

共 17 条

[1]

DANES F, 1978, 5TH P C PHYS CHEM

[2]

DEKOCK AJR, 1973, SEMICONDUCTOR SILICO, P83

[3] EQUILIBRIUM OF CARBON AND OXYGEN IN SILICON WITH CARBON-MONOXIDE IN AMBIENT ATMOSPHERE [J].