ETCHING AND LITHOGRAPHY RUNNING NECK AND NECK

被引:1
作者
REINBERG, AR
机构
[1] semiconductor industry with offices in Westport, Connecticut
来源
IEEE CIRCUITS AND DEVICES MAGAZINE | 1993年 / 9卷 / 01期
关键词
D O I
10.1109/101.180739
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
It is argued that as device geometry goes below 0.5 mu m, dry processing will play a larger role even in traditional forms of lithography. It will play a major and critical role in the exotic technologies now in development, of which X-ray lithography is an important example. Lithographers will have to use advanced dry-etch processes in several key areas to optimize production of the resist image. Among these advanced processes are the production of the original patterns and the provision of critical parts of the resist development process. Final transfer of the completed resist image into the underlying material will continue to be a major portion of the pattern-transfer process. The manufacturing of masks for optical and X-ray lithography, deep ultraviolet lithography, and technical issues for multilayer resists are discussed. © 1993, IEEE. All Rights Reserved.
引用
收藏
页码:24 / 29
页数:6
相关论文
共 3 条
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