EFFECT OF MINOR CONSTITUENTS ON ELECTRO-TRANSPORT-INDUCED FAILURE SITE IN THIN GOLD-FILMS

被引：9

作者：

HUMMEL, RE

KRUMEICH, BK

DEHOFF, RT

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 11期

关键词：

D O I：

10.1063/1.90217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：960 / 962

页数：3

共 15 条

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[6] ACTIVATION-ENERGY FOR ELECTROMIGRATION AND GRAIN-BOUNDARY SELF-DIFFUSION IN GOLD [J].

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DHEURLE, FM .

SCRIPTA METALLURGICA, 1973, 7 (10) :1027-1030

[7] ELECTROMIGRATION AND TRANSPORT REVERSAL IN COPPER-SILVER THIN-FILMS [J].

GANGULEE, A ;

DHEURLE, FM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1974, 35 (03) :293-299

[8]

Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[9] ELECTROMIGRATION IN THIN GOLD FILMS [J].

HARTMAN, TE ;

BLAIR, JC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (04) :407-&

[10] DIRECTION OF ELECTROMIGRATION IN THIN SILVER, GOLD, AND COPPER FILMS [J].

HUMMEL, RE ;

BREITLING, RM .

APPLIED PHYSICS LETTERS, 1971, 18 (09) :373-+

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