REACTION PROBABILITY FOR THE SPONTANEOUS ETCHING OF SILICON BY CF3 FREE-RADICALS

被引：33

作者：

ROBERTSON, RM

GOLDEN, DM

ROSSI, MJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584421

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1632 / 1640

页数：9

共 28 条

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