INDENTATION FRACTURE-TOUGHNESS OF SINTERED SILICON-CARBIDE IN THE PALMQVIST CRACK REGIME - REPLY

被引：6

作者：

LI, Z

GHOSH, A

KOBAYASHI, AS

BRADT, RC

机构：

[1] UNIV WASHINGTON,DEPT MECH ENGN,SEATTLE,WA 98195

[2] UNIV NEVADA,MACKAY SCH MINES,RENO,NV 89557

[3] PHILLIPS DISPLAY COMPONENTS,ANN ARBOR,MI 48106

来源：

关键词：

D O I：

10.1111/j.1151-2916.1991.tb06950.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：889 / 890

页数：2

共 7 条

[1]

GHOSH A, UNPUB J AM CERAM SOC

[2] INDENTATION PLASTICITY AND MICROFRACTURE IN SILICON-CARBIDE [J].

LANKFORD, J ;

DAVIDSON, DL .

LI, Z ;

GHOSH, A ;

KOBAYASHI, AS ;

BRADT, RC .

[4]

NIIHARA K, 1982, J AM CERAM SOC, V65, pC116, DOI 10.1111/j.1151-2916.1982.tb10482.x

NIIHARA, K .

[6]

SAKAI M, UNPUB INT MATER REV

SRINIVASAN, S ;

SCATTERGOOD, RO .