SURFACE CONCENTRATIONS OF INDIUM, PHOSPHORUS, AND OXYGEN IN INDIUM-PHOSPHIDE SINGLE-CRYSTALS AFTER EXPOSURE TO GAMBLE SOLUTION

被引:3
作者
DITTMAR, TB
FERNANDO, Q
LEAVITT, JA
MCINTYRE, LC
机构
[1] UNIV ARIZONA,DEPT CHEM,TUCSON,AZ 85721
[2] UNIV ARIZONA,DEPT PHYS,TUCSON,AZ 85721
关键词
D O I
10.1021/ac00047a009
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The surface of indium phosphide single crystals exposed to synthetic lung fluid (Gamble solution) has been investigated. An oxygen depth profile, obtained by employing the 3.034-Mev resonance in the elastic scattering of alpha particles from O-16, detected oxygen at maximum concentrations of 24% in a layer 1000 angstrom thick. O:In and O:P ratios were found to increase with prolonged exposure time as determined by angle-resolved XPS, although binding energies and peak fwhm's remained relatively constant. The surface concentration of indium was found to be decreased in this 1000-angstrom-thick layer. In3+ was detected at parts per billion levels in the Gamble solution, confirming that indium was leached from the InP surface. The similarity of P:In ratios at all lengths of exposure suggests that phosphorus was also leached by the Gamble solution.
引用
收藏
页码:2929 / 2933
页数:5
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