SEMICONDUCTOR SUBSTRATE-TEMPERATURE MEASUREMENT BY DIFFUSE REFLECTANCE SPECTROSCOPY IN MOLECULAR-BEAM EPITAXY

被引:77
作者
JOHNSON, SR
LAVOIE, C
TIEDJE, T
MACKENZIE, JA
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 03期
关键词
D O I
10.1116/1.586857
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The temperature of semiconductor substrates used in molecular beam epitaxy is determined from the diffuse reflection spectrum (DRS) of the substrates, measured with an external light source. The relative sensitivity of the technique is better than 1-degrees-C. The absolute calibration of the DRS technique for substrates of different thickness, conductivity and back surface texture, is described. The DRS technique is also sensitive to changes in front surface roughness as demonstrated by the increase in the diffuse reflectance at short wavelengths when the oxide desorbs.
引用
收藏
页码:1007 / 1010
页数:4
相关论文
共 5 条
  • [1] HAMBLETON KG, 1961, P PHYS SOC LOND, V7, P1147
  • [2] INFRARED TRANSMISSION SPECTROSCOPY OF GAAS DURING MOLECULAR-BEAM EPITAXY
    HELLMAN, ES
    HARRIS, JS
    [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 38 - 42
  • [3] DIFFUSE OPTICAL REFLECTIVITY MEASUREMENTS ON GAAS DURING MOLECULAR-BEAM EPITAXY PROCESSING
    LAVOIE, C
    JOHNSON, SR
    MACKENZIE, JA
    TIEDJE, T
    VANBUUREN, T
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 930 - 933
  • [4] OXIDE THICKNESS EFFECT AND SURFACE ROUGHENING IN THE DESORPTION OF THE OXIDE FROM GAAS
    VANBUUREN, T
    WEILMEIER, MK
    ATHWAL, I
    COLBOW, KM
    MACKENZIE, JA
    TIEDJE, T
    WONG, PC
    MITCHELL, KAR
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (04) : 464 - 466
  • [5] A NEW OPTICAL-TEMPERATURE MEASUREMENT TECHNIQUE FOR SEMICONDUCTOR SUBSTRATES IN MOLECULAR-BEAM EPITAXY
    WEILMEIER, MK
    COLBOW, KM
    TIEDJE, T
    VANBUUREN, T
    XU, L
    [J]. CANADIAN JOURNAL OF PHYSICS, 1991, 69 (3-4) : 422 - 426