INFLUENCE OF THE THICKNESS OF DAMAGED LAYERS ON THE MIGRATION OF DOPANDS DURING LASER ANNEALING IN IMPLANTED SILICON

被引：3

作者：

DVURECHENSKII, AV ^{[1
]}

MUSTAFIN, TN ^{[1
]}

SMIRNOV, LS ^{[1
]}

GEILER, HD ^{[1
]}

GOTZ, G ^{[1
]}

JAHN, U ^{[1
]}

机构：

[1] FRIEDRICH SCHILLER UNIV,SEKT PHYS,DDR-6900 JENA,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 63卷 / 02期

关键词：

D O I：

10.1002/pssa.2210630264

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K203 / K206

页数：4

共 13 条

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[5]

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[6]

HEINIG KH, 1977, INT C ION IMPLANTATI

[7] DOPANT SEGREGATION IN SILICON BY PULSED-LASER ANNEALING - TEST CASE FOR THE CONCEPT OF THERMAL MELTING [J].

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[8] OPTICAL HEATING IN SEMICONDUCTORS [J].

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[9]

MUSTAFIN TN, 1978, FIZ TEKH POLUPROV, V12, P1312

[10]

MUSTAFIN TN, 1978, P INT C IBM BUDAPEST

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