CHEMICAL EVAPORATION OF GAAS UNDER HYDROGEN FLUX AND HYDROCHLORIC-ACID

被引：4

作者：

ETIENNE, D ^{[1
]}

CHEVRIER, J ^{[1
]}

BOUGNOT, G ^{[1
]}

机构：

[1] UNIV SCI & TECHNIQUES LANGUEDOC,CNRS,CTR ETUD ELECTR SOLIDES,34060 MONTPELLIER,FRANCE

来源：

MATERIALS RESEARCH BULLETIN | 1973年 / 8卷 / 08期

关键词：

D O I：

10.1016/0025-5408(73)90080-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：951 / 960

页数：10

共 8 条

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CHEVRIER, J ;

ETIENNE, D ;

BOHE, C .

MATERIALS RESEARCH BULLETIN, 1971, 6 (03) :137-&

[2] EPITAXIAL GROWTH OF ZINC SELENIDE ON GALLIUM ARSENIDE [J].

BOUGNOT, G ;

ETIENNE, D ;

CHEVRIER, J ;

BOHE, C .

MATERIALS RESEARCH BULLETIN, 1971, 6 (03) :145-&

[3]

CHEVRIER J, TO BE PUBLISHED

[4]

HURLE DTJ, 1967, J PHYS CHEM SOLID C, V6, P241

[5] VAPOR PHASE ETCHING OF GAAS IN H2-H2O FLOW SYSTEM [J].

LIN, C ;

CHOW, L .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) :407-&

[6]

MAGOMEDOV KA, 1967, SOV PHYS CRYSTALLOGR, V12, P286

[7] ETCHING AND POLISHING BEHAVIOR OF GE AND SI WITH HI [J].

REISMAN, A ;

BERKENBLIT, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (08) :812-+

[8] PREPARATION OF GAAS SURFACES FOR EPITAXIAL DEPOSITION [J].

STEWART, CEE .

SOLID-STATE ELECTRONICS, 1967, 10 (12) :1199-&

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