AUTOMATIC-MEASUREMENT SYSTEM OF BARRIER HEIGHTS OF METAL-SEMICONDUCTOR CONTACTS DURING THERMAL TREATMENTS

[1] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[2] Poate J M, 1978, THIN FILMS INTERDIFF

[3] RHODERICK EH, 1980, METAL SEMICONDUCTOR, P15

[4] GENERALIZATION OF THERMIONIC EMISSION THEORY - TEMPERATURE-DEPENDENCE OF GAAS INTERVALLEY GAP FROM MEASUREMENTS ON SCHOTTKY DIODES [J]. SOLID-STATE ELECTRONICS, 1979, 22 (04) : 435 - 441

[5] SIGURD D, 1974, I PHYS C SER, V22, P141

[6] SZE SM, 1969, PHYSICS SEMICONDUCTO, P371

[1] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[2] Poate J M, 1978, THIN FILMS INTERDIFF

[3] RHODERICK EH, 1980, METAL SEMICONDUCTOR, P15

[4] GENERALIZATION OF THERMIONIC EMISSION THEORY - TEMPERATURE-DEPENDENCE OF GAAS INTERVALLEY GAP FROM MEASUREMENTS ON SCHOTTKY DIODES [J]. SOLID-STATE ELECTRONICS, 1979, 22 (04) : 435 - 441

[5] SIGURD D, 1974, I PHYS C SER, V22, P141

[6] SZE SM, 1969, PHYSICS SEMICONDUCTO, P371