BAND STRUCTURE OF BISMUTH TELLURIDE

[1] ADAMS EN, PROGR SEMICONDUCTORS, V6, P109

[2] INFRA-RED FARADAY ROTATION AND FREE CARRIER ABSORPTION IN BI2TE3 [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1960, 76 (488): : 169 - 179

[3] BIRKHOLZ U, 1962, Z NATURFORSCH, VA 17, P161

[4] BIRKHOLZ U, 1963, Z NATURFORSCH, VA 18, P638

[5] BRAUN E, 1967, THESIS TECHNISCHE HO

[6] THE G-FACTOR AND DEHAASVANALPHEN EFFECT OF ELECTRONS IN BISMUTH [J]. PHILOSOPHICAL MAGAZINE, 1960, 5 (50): : 115 - 126

[7] ANISOTROPIC GALVANOMAGNETIC EFFECTS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (11): : 1101 - 1108

[8] GALVANOMAGNETIC EFFECTS IN N-TYPE BISMUTH TELLURIDE [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 71 (459): : 430 - 443

[9] GALVANOMAGNETIC EFFECTS IN P-TYPE BISMUTH TELLURIDE [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (465): : 380 - 390

[10] DRATH P, 1967, PHYS LETTERS, VA 24, P504

[1] ADAMS EN, PROGR SEMICONDUCTORS, V6, P109

[2] INFRA-RED FARADAY ROTATION AND FREE CARRIER ABSORPTION IN BI2TE3 [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1960, 76 (488): : 169 - 179

[3] BIRKHOLZ U, 1962, Z NATURFORSCH, VA 17, P161

[4] BIRKHOLZ U, 1963, Z NATURFORSCH, VA 18, P638

[5] BRAUN E, 1967, THESIS TECHNISCHE HO

[6] THE G-FACTOR AND DEHAASVANALPHEN EFFECT OF ELECTRONS IN BISMUTH [J]. PHILOSOPHICAL MAGAZINE, 1960, 5 (50): : 115 - 126

[7] ANISOTROPIC GALVANOMAGNETIC EFFECTS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (11): : 1101 - 1108

[8] GALVANOMAGNETIC EFFECTS IN N-TYPE BISMUTH TELLURIDE [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 71 (459): : 430 - 443

[9] GALVANOMAGNETIC EFFECTS IN P-TYPE BISMUTH TELLURIDE [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (465): : 380 - 390

[10] DRATH P, 1967, PHYS LETTERS, VA 24, P504