SUSCEPTIBILITY OF SI-P ACROSS THE METAL-INSULATOR-TRANSITION .1. DIAMAGNETISM

被引：33

作者：

ROY, A

TURNER, M

SARACHIK, MP

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.37.5522

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5522 / 5530

页数：9

共 51 条

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