MAPPING OF CONDUCTION BANDS IN GAAS BY ANGLE-RESOLVED PHOTOEMISSION

被引：15

作者：

MILLS, KA ^{[1
]}

DENLEY, D ^{[1
]}

PERFETTI, P ^{[1
]}

SHIRLEY, DA ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT CHEM,BERKELEY,CA 94720

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 30卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0038-1098(79)91173-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Using angle-resolved photoemission spectra in the photon energy range 12 ≤ hv ≤ 20 eV, we have mapped selected conduction bands for the (110) direction in GaAs using a simple direct-transition analysis. At higher energies the spectra suggest a one-dimensional density of states interpretation. The two mechanisms are discussed. © 1979.

引用

页码：743 / 747

页数：5

共 23 条

[1] (110) SURFACE-STATES OF GAAS - SENSITIVITY OF ELECTRONIC-STRUCTURE TO SURFACE-STRUCTURE [J].