E-BEAM WRITTEN OPTICALLY TRANSPARENT X-RAY MASKS - 4 LEVELS FOR AN INDUSTRIAL VLSI CHIP WITH MEGABIT DESIGN RULES

被引:1
作者
EHRLICH, C
BREITHAUPT, B
DEMMELER, R
JACOBS, EP
KOHLER, C
KOHLMANN, K
PETSCHNER, M
REIMER, K
机构
[1] Fraunhofer Institut für Mikrostrukturtechnik (IMT), D-1000 Berlin 33
[2] Siemens AG Corporate Research and Development Otto-Hahn-Ring 6, FEDERAL REPUBLIC OF
关键词
Electron Beams - Integrated Circuits; VLSI; -; Fabrication; X-Rays; Applications;
D O I
10.1016/0167-9317(92)90033-N
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
For the acceptance of X-ray lithography in an industrial environment not only the high resolution and accuracy capabilities have to be demonstrated, but also the compatibility of the X-ray related processes with up to date requirements on complexity and integration of VLSI devices. To achieve this we improved our running mask technology by developing a manufacturing process for e-beam written X-ray masks for direct use in an optically aligning X-ray stepper. This mask concept was applied in a joint project with an industrial partner in which the four final lithographic steps in a VLSI CMOS fabrication were performed by means of X-ray lithography.
引用
收藏
页码:161 / 165
页数:5
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