DIELECTRIC LOSSES IN BI12GEO20 SINGLE-CRYSTALS

被引：7

作者：

KUWATA, J

ONODA, M

UCHINO, K

NOMURA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 08期

关键词：

D O I：

10.1143/JJAP.20.1609

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1609 / 1610

页数：2

共 13 条

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HOU, SL ;

HARVILL, ML .

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[3]

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[4]

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[5]

GLUSHKOVA TM, 1971, FIZ TVERD TELA, V13, P2753

[6]

KAWAMURA M, 1973, T I ELECTRON COMMU B, V56, P229

[7] HIGH-PERMITTIVITY TEMPERATURE-STABLE CERAMIC DIELECTRICS WITH LOW MICROWAVE LOSS [J].

KELL, RC ;

GREENHAM, AC ;

OLDS, GCE .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1973, 56 (07) :352-354

[8]

MORI T, 1977, 1ST P M FERR MAT APP, P151

[9] ELECTROMECHANICAL PROPERTIES OF BISMUTH SILICON-OXIDE (BI12SIO20) [J].

SCHWEPPE, H ;

QUADFLIE.P .

IEEE TRANSACTIONS ON SONICS AND ULTRASONICS, 1974, SU21 (01) :56-57

[10] ELASTIC, PIEZOELECTRIC, AND DIELECTRIC-CONSTANTS OF BI12GEO20 [J].

SLOBODNIK, AJ ;

SETHARES, JC .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (01) :247-+

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