X-RAY-LINE BROADENING IN NEUTRON-IRRADIATED SILICON-CARBIDE

被引：11

作者：

ISEKI, T ^{[1
]}

YANO, T ^{[1
]}

MIYAZAKI, H ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,NUCL REACTORS RES LAB,MEGURO KU,TOKYO 152,JAPAN

来源：

JOURNAL OF NUCLEAR MATERIALS | 1992年 / 191卷

关键词：

D O I：

10.1016/S0022-3115(09)80114-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

X-ray line broadening in reaction-sintered beta-SiC after neutron irradiation in fast breeder reactors at temperatures around 370-620-degrees-C to fluences of 3.0 x 10(24) to 1.7 x 10(27) n/m2 (E > 0.1 MeV) has been investigated. Broadening occurred after neutron irradiation for all specimens and appreciable broadening was present for specimens irradiated to greater-than-or-equal-to 3.2 x 10(26) n/m2. At neutron fluences below 1.5 x 10(26) n/m2 observed broadening could be attributed mainly to the crystallite size effect but a strain contribution was significant above 3.2 x 10(26) n/m2. Fairly large interstitial dislocation loops were observed with TEM in the latter specimens. The calculated crystallite size was in close agreement with the spacing of the dislocation loops.

引用

页码：588 / 591

页数：4

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