SOME CERIUM BETA-DIKETONATE DERIVATIVES AS MOCVD PRECURSORS

被引:71
作者
BECHT, M [1 ]
GERFIN, T [1 ]
DAHMEN, KH [1 ]
机构
[1] SWISS FED INST TECHNOL,ANORGAN CHEM LAB,UNIV STR 6,CH-8092 ZURICH,SWITZERLAND
关键词
D O I
10.1021/cm00025a026
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Four beta-diketonato complexes of cerium were synthesized and investigated by thermal analysis, mass spectrometry, and infrared spectroscopy with respect to their ability to function as possible precursors for MOCVD. Thermal analysis revealed sufficient volatility for all these compounds and an enhancement of the volatility by using fluorinated ligands could be observed. Using all these precursors, growth experiments of cerium dioxide films were carried out in a horizontal MOCVD reactor. The growth rates were determined by ellipsometry and independently by profilometry. The dependence of the growth rate on evaporation rate, oxygen flow and substrate temperature are discussed in detail. Single-phase CeO2 films with high preferential orientation in the [100] and [111] directions could be prepared on Si[100] and quartz as was shown by X-ray diffraction.
引用
收藏
页码:137 / 144
页数:8
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