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THE DETERMINATION OF THE HUANG-RHYS FACTOR FOR A DEEP LEVEL IN A SEMICONDUCTOR

被引：7
作者：
BURT, MG
机构：
来源：
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1981年 / 14卷 / 28期
关键词：
D O I：
10.1088/0022-3719/14/28/001
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：L845 / L849
页数：5
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