SECONDARY-ELECTRON EMISSION FROM A FE(110) SINGLE-CRYSTAL

被引：6

作者：

KOSHIKAW.T

SHIMIZU, R

GOTO, K

ISHIKAWA, K

机构：

[1] OSAKA UNIV, DEPT APPL PHYS, SUITA, OSAKA, JAPAN

[2] NAGOYA INST TECHNOL, DEPT FINE MEASUREMENTS, SHOWA, NAGOYA, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 04期

关键词：

D O I：

10.1063/1.1662473

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1900 / 1901

页数：2

共 10 条

[1]

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[2] METHOD OF DETECTING FINE-STRUCTURE IN SECONDARY-ELECTRON EMISSION YIELD AND APPLICATION TO SI(111) [J].

GOTO, K ;

ISHIKAWA, K .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1559-+

[3]

KOSHIKAWA T, 1972, 51 OS U TECHN REPT

[4]

KOSHIKAWA T, 1972, 22 OS U TECHN REPTS

[5] SECONDARY EMISSION STUDIES ON GE AND NA-COVERED GE [J].

PALMBERG, PW .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (05) :2137-&

[6]

SEILER H, 1970, Z ANGEW PHYSIK, V29, P254

[7]

SHULMAN AR, 1969, FIZ TVERD TELA+, V11, P1003

[8]

SHULMAN AR, 1970, FIZ TVERD TELA+, V12, P586

[9]

SHULMAN AR, 1968, FIZ TVERD TELA+, V10, P1512

[10] TEMPERATURE DEPENDENCE OF MEAN FREE PATH IN SECONDARY ELECTRON EMISSION [J].

TAUB, H ;

STERN, RM ;

DVORYANKIN, VF .

PHYSICA STATUS SOLIDI, 1969, 33 (02) :573-+

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