1-GBIT/S BIAS-FREE OPERATION OF 1.3-MU-M STRAINED MQW-LDS IN -40-DEGREES-C TO +85-DEGREES-C TEMPERATURE-RANGE

被引：2

作者：

YAMADA, H ^{[1
]}

SENGA, K ^{[1
]}

SASAKI, Y ^{[1
]}

TORIKAI, T ^{[1
]}

UJI, T ^{[1
]}

机构：

[1] NEC CORP LTD,ULSI DEVICE DEV LABS,OTSU,SHIGA 520,JAPAN

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 08期

关键词：

SEMICONDUCTOR JUNCTION LASERS; SEMICONDUCTOR QUANTUM WELLS;

D O I：

10.1049/el:19950435

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bias-free 1.3 mu m laser diodes (LDs) have been developed for gigabit/s transmission without temperature control. Power variation as low as 2dB between -20 degrees C +85 degrees C under 30mA driving current has been attained by introducing strained multiple quatum well (MQW) and short cavity configurations. Wide eye-opening has been realised under 1 Gbit/s zero-bias modulation in the temperature range -40 to +85 degrees C.

引用

页码：638 / 639

页数：2

共 6 条

[1]

SASAKI T., YAMAZAKI H., HENMI N., YAMADA H., YAMAGUCHI M., KITAMURA M., MITO I., Extremely low threshold current operation in 1.5-μm MQW-DFB laser diodes with semi-insulating InP current blocking region, J. Lightwave Technol., LT-8, pp. 1343-1349, (1990)

[2]

NOBUHARA H., NAKAJIMA K., TANAKA K., ODAGAWA T., FUJII T., WAKAO K., Zero-bias modulation of tensile-strained InGaAs/InGaAsP quantum well lasers with wide phase margins, Electron. Lett., 29, pp. 138-139, (1993)

[3]

THUS P.J.A., VAN DONGEN T., TIEMEIJER L.F., BINSMA J.J.M., High-performance λ = 1.3μm InGaAsP-InP strained-layer quantum w'ell lasers, J. Lightwave Technol., LT-12, pp. 28-37, (1994)

[4]

YAMADA H., TERAKADO T., SASAKI Y., TAKANO S., TAMURA T., TORIKAI T., UJI T., Extremely low operating current 1.3-pm MQW lasers at high temperature, Tech. Dig. ECOC'92, pp. 101-104, (1990)

[5]

UJI T., SHIKADA M., FUJITA S., HAYASHI J., ISODA Y., 565 Mb/s-5km and 140Mb/s-25km single-mode fiber transmission using 1.3pm mesa-structure surface-emitting LEDs, Tech. Dig. IOOC-ECOC'85, pp. 57-60, (1985)

[6]

FUKUSHIMA T., KASUKAWA A., IWASE M., NAMEGAYA T., SHIBATA M., Compressively strained 1.3 µm InAsP/InP and GaInAsP/InP multiple quantum well lasers for high-speed parallel data transmission systems, IEEE J. Quantum Electron., QE-29, pp. 1536-1543, (1993)

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