THE COPPER CENTER - A TRANSIENT SHALLOW ACCEPTOR IN ZNS AND CDS

被引:46
作者
HEITZ, R
HOFFMANN, A
THURIAN, P
BROSER, I
机构
[1] Inst. fur Festkorperphys., Tech. Univ., Berlin
关键词
D O I
10.1088/0953-8984/4/1/025
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Excitation measurements of the 2E(D)-2T2(D) Cu2+ luminescences in ZnS and CdS crystals are presented, revealing new excitation processes of the centres. In ZnS sharp resonances observed on the low energy onset of the charge transfer band at 1.17 eV enable us to identify a transient shallow acceptor state of the Cu2+ centre in ZnS. An energy transfer process by photoexcited holes between Cu2+ and Fe2+ centres yields an accurate value for the deep Cu2+-acceptor position in ZnS of (1.293 +/- 0.005) eV. In CdS the deep Cu2+-acceptor position is (1.20 +/- 0.02) eV above the valence band. Additional excitation bands just below the excitonic bandgap are observed and interpreted as transitions between the conduction band and the transient shallow acceptor state. The binding energies of these state are determined to be 119 and 94 meV for ZnS and CdS, respectively. The recombination energy of the transient shallow acceptor state is transferred efficiently to the excited 2E(D) state, leading to the internal Cu2+ luminescence.
引用
收藏
页码:157 / 168
页数:12
相关论文
共 38 条
  • [1] PHOTO-IONIZATION OF DEEP IMPURITIES IN SEMICONDUCTORS
    ALLEN, JW
    [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (06): : 1077 - &
  • [2] THE DECAY OF THE GREEN FLUORESCENCE OF COPPER IN ZINC-OXIDE UNDER SELECTIVE EXCITATION
    BAUMERT, R
    BROSER, I
    POHL, UW
    SANGE, B
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (24): : 4767 - 4776
  • [3] EVIDENCE FOR EXCITON BINDING AT NI IMPURITY SITES IN ZNSE
    BISHOP, SG
    ROBBINS, DJ
    DEAN, PJ
    [J]. SOLID STATE COMMUNICATIONS, 1980, 33 (01) : 119 - 122
  • [4] BROSER I, 1991, J LUMIN, V48-9, P693
  • [5] A COMPARATIVE STUDY OF INFRARED LUMINESCENCE AND SOME OTHER OPTICAL AND ELECTRICAL PROPERTIES OF ZN-CU SINGLE CRYSTALS
    BROSER, I
    SCHULZ, HJ
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (06) : 545 - 548
  • [6] BROSER I, 1967, 2 6 SEMICONDUCTING C, P81
  • [7] BROSER I, 1950, Patent No. 814193
  • [8] Broser I, 1970, J LUMIN, V1-2, P39
  • [9] BROSER I, 1965, PHYS REV A, V6, P2135
  • [10] BROSER I, 1956, J PHYSIQUE RAD, V8, P791