CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION OF NB/ALOX-AL/NB JOSEPHSON-JUNCTIONS

被引：28

作者：

IMAMURA, T

HASUO, S

机构：

[1] Fujitsu Laboratories Ltd., Atsugi 243-01

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 06期

关键词：

D O I：

10.1063/1.104556

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A study of microstructure of Nb/AlO(x)-Al/Nb Josephson junctions by cross-sectional transmission electron microscopy yielded much information regarding the junction barrier region. Both thick Nb and several-nanometer Al form polycrystalline films with columnar structures. Nb is oriented to the (110) plane, and Al is (111). The 200 nm lower Nb has a wavy surface with approximately 5 nm smoothness, but its surface is planarized by several nanometers Al deposited on it. Thus AlO(x) with a smoothness under 1 nm can be formed on Al. The upper Nb has a good crystalline structure even just above the AlO(x) barrier.

引用

页码：645 / 647

页数：3

共 8 条

[1] HIGH-QUALITY REFRACTORY JOSEPHSON TUNNEL-JUNCTIONS UTILIZING THIN ALUMINUM LAYERS [J].