ELECTRICAL MEASUREMENTS OF BORON IMPLANTED SILICON ON SAPPHIRE AND BULK SILICON

被引：4

作者：

ALESTIG, G

HOLMEN, G

MARTENSON, M

PETERSTROM, S

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 49卷 / 1-3期

关键词：

D O I：

10.1080/00337578008243058

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：7 / 12

页数：6

共 21 条

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[8] ION-IMPLANTATION IN SILICON FILMS ON SAPPHIRE [J].

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