MAGNETOTRANSPORT STUDIES OF GASB/INAS CROSSED GAP HETEROSTRUCTURES IN HIGH MAGNETIC-FIELDS

被引：2

作者：

DALTON, KSH ^{[1
]}

BOGAERTS, R ^{[1
]}

MARTIN, RW ^{[1
]}

LAKRIMI, M ^{[1
]}

SYMONS, DM ^{[1
]}

WARBURTON, RJ ^{[1
]}

NICHOLAS, RJ ^{[1
]}

HERLACH, F ^{[1
]}

MASON, NJ ^{[1
]}

WALKER, PJ ^{[1
]}

机构：

[1] CATHOLIC UNIV LEUVEN,LAGE TEMP HOGE VELDENFYS LAB,B-3000 LOUVAIN,BELGIUM

来源：

PHYSICA B | 1993年 / 184卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(93)90349-B

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Magnetotransport measurements of MOVPE-grown GaSb/InAs heterostructures in magnetic fields up to 50T have demonstrated novel transport effects for a system with coexisting electrons and holes. The Hall resistivity, rho(xy), has large features and strong minima, while the longitudinal magnetoresistance, rho(xx), shows plateau-like features. This is in sharp contrast with the behaviour of two-dimensional systems containing only one carrier type, where rho(xx) oscillates and rho(xy) shows quantised plateaus. The samples measured are close to the intrinsic limit (n(e)/n(h) congruent-to 1.5), and compensated quantum Hall plateaus are seen, with rho(xy) approaching zero for fields at which there is the same integral number of filled Landau levels of electrons as of holes.

引用

页码：202 / 205

页数：4

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