MAGNETIC-FLUX PINNING IN EPITAXIAL YBA2CU3O7-DELTA THIN-FILMS

被引：5

作者：

ROSHKO, A

GOODRICH, LF

RUDMAN, DA

MOERMAN, R

VALE, LR

机构：

[1] National Institute of Standards and Technology, Boulder, 80303, CO

[2] Department of Applied Physics, University of Twente, Enschede

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1995年 / 24卷 / 12期

关键词：

DISLOCATIONS; FLUX PINNING; MICROSTRUCTURE; NUCLEATION MECHANISM;

D O I：

10.1007/BF02653010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of microstructure on the critical current density of laser ablated YBa2Cu3O70-delta thin films has been examined. Scanning tunneling microscopy was used to examine the morphologies of YBa2Cu3O7-delta films and the morphology data were then correlated with measurements of the critical current density. The films were found to grow by an island nucleation and growth mechanism. The critical current densities of the films are similar to those of films with screw dislocation growth, indicating that screw dislocation growth is not necessary for good pinning. The data suggest that the critical current density in applied magnetic field may be higher in films with higher densities of growth features.

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页码：1919 / 1922

页数：4

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